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Breakdown voltage
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Breakdown voltage
RIS
0.003
(Research Intensity Score)
Papers
487
Top papers
Stability, Reliability, and Robustness of GaN Power Devices: A Review
2023 · 438 citations
Ultra-wide bandgap semiconductor Ga2O3 power diodes
2022 · 640 citations
Enhanced Anticarbonization and Electrical Performance of Epoxy Resin via Densified Spherical Boron Nitride Networks
2023 · 89 citations
Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
2023 · 48 citations
High-voltage SiC power devices for improved energy efficiency
2022 · 110 citations
Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV
2025 · 23 citations
Experimental investigation of zinc ferrite/insulation oil nanofluid natural convection heat transfer, AC dielectric breakdown voltage, and thermophysical properties
2024 · 28 citations
A 1.86-kV double-layered NiO/ β -Ga2O3 vertical p–n heterojunction diode
2020 · 237 citations
A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors
2024 · 34 citations
Newest papers
Over 3 kV and ultra-low leakage vertical (011) β -Ga2O3 power diodes with engineered Schottky contact and high-permittivity dielectric field plate
2026 · 3 citations
Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability
2026 · 1 citations
A review of GaN HEMTs on β-Ga2O3 substrates for RF and power electronics applications
2026
Recent advances for developing GaN-based power devices grown on Si substrate
2026
Study of p-NiO X /Ga 2 O 3 high-voltage diodes
2026
A Two-Channel Calibration Architecture for Argon-Carrier Dielectric Barrier Discharges: Imported Momentum Transfer and Self-Inverted Ionization
2026
A Two-Channel Calibration Architecture for Argon-Carrier Dielectric Barrier Discharges: Imported Momentum Transfer and Self-Inverted Ionization
2026
Homoepitaxial GaN-on-GaN trench MOSFETs with 438 MW/cm2 figure of merit and improved gate reliability
2026
1.7kV Fully-Vertical GaN Trench MOSFET with Nitrogen Ion-Implanted Guard Rings
2026
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