elements
-live
Search elements, keywords, and sectors
🔎
Elements
Subjects
Pricing
Log in
Sign up
Home
/
Subjects
/
Cutoff frequency
← Back to subjects
Current data, viewed at
Yearly
resolution.
Personal members see monthly resolution →
Keyword
keyword
Cutoff frequency
RIS
0.001
(Research Intensity Score)
Papers
127
Top papers
Vacuum-ultraviolet (λ < 200 nm) photodetector array
2024 · 87 citations
AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz
2025 · 25 citations
Radiofrequency transistors based on aligned carbon nanotube arrays
2021 · 132 citations
Thin channel Ga2O3 MOSFET with 55 GHz fMAX and &gt; 100 V breakdown
2024 · 17 citations
Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
2022 · 45 citations
Material-Driven Performance Analysis of a Vertical Nanowire Tunnel FET for Analog Applications
2025 · 5 citations
TCAD-based evaluations of a PNPN tunneling field effect transistor based on GaAs cladding layer
2025 · 3 citations
Preparation of UV cutoff anti-reflective coatings by sol-gel method in view of silicon heterojunction solar cells
2026 · 1 citations
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
2020 · 123 citations
Newest papers
Preparation of UV cutoff anti-reflective coatings by sol-gel method in view of silicon heterojunction solar cells
2026 · 1 citations
Simulation and design of asymmetric vertical cladding layer-based tunneling field effect transistors with improved DC and Analog/RF performance
2026 · 1 citations
Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study
2026 · 1 citations
Design and Optimization of AlGaN/AlN/GaN L-SBD for Radiofrequency Applications
2026 · 1 citations
Analytical Modeling of Base Transit Time in SiGe ‐ HBTs Considering Recombination Effects Under Intermediate Injection Levels
2026 · 1 citations
Barrier and doping co-engineering using graded AlGaN and step-Gaussian profiles for enhanced RF power performance in HfO2-based MOS-HEMTs
2026
Above 300 GHz Ultrafast Cutoff Frequency Achieved via Air Gap‐Induced Capacitance in van der Waals ReSe 2 Schottky Diodes
2026
Optimized DC and RF Characteristics of ScAlN/InGaN/GaN HEMTs on Silicon Carbide using Step-graded AlGaN Buffer Layers
2026
Performance Comparison of AlGaN/GaN HEMTs with Al0.05Ga0.95N and β-Ga2O3 Back Barriers on SiC Substrate for RF Applications
2026
Browse all papers →
Cutoff frequency's history
Research intensity over time
Yearly
Personal members see monthly resolution →
Data temporarily unavailable — please try again shortly.
Close ✕
Cutoff frequency's papers
Ordered by current research-activity contribution.
Loading…
Close ✕
Read full text ↗
Share
Share on X
Share on Facebook
Share on LinkedIn
Copy link