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Dynamic random-access memory
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Keyword
keyword
Dynamic random-access memory
RIS
0.001
(Research Intensity Score)
Papers
78
Top papers
3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications
2025 · 35 citations
Ultralow–switching current density multilevel phase-change memory on a flexible substrate
2021 · 168 citations
Toward the Speed Limit of Phase‐Change Memory
2023 · 68 citations
High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs
2025 · 10 citations
Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes
2025 · 15 citations
Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation
2024 · 22 citations
Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology
2025 · 11 citations
ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM
2024 · 12 citations
Beyond ZrO 2 : Rutile TiO 2 as the Dielectric Platform for Next-Generation DRAM Capacitors
2026 · 4 citations
Newest papers
Beyond ZrO 2 : Rutile TiO 2 as the Dielectric Platform for Next-Generation DRAM Capacitors
2026 · 4 citations
Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors
2026 · 3 citations
Ferroelectric-EnhancedUltrafast Nonvolatile Floating-GateMemory
2026
A sacrificial HfN interlayer enables oxygen-buffered Mo electrodes for sub‑0.4nm equivalent oxide thickness of HfO2/ZrO2 nanolaminates for DRAM capacitors
2026
Ultrathin Bi2O3 Interlayers for Defect and Grain-Boundary Engineering Toward Improved Dielectric Performance in ALD ZrO2 DRAM Capacitors
2026
Ta-Sb-Te Phase Change Memory Device With Reduced Multilevel Resistance Drift for Deep Neural Network Applications
2026 · 1 citations
Dual-material-gate engineering for GIDL suppression and pillar aspect-ratio reduction in 4F 2 vertical DRAM cell transistors
2026
Indium Tin Oxide Vertical Channel Transistors for Scaled 4F 2 2T0C Gain Cell Memory With Etched Sidewall Cleaning
2026 · 1 citations
Silicon FET reservoir for dynamic edge vision-2
2026
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