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Equivalent oxide thickness
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Equivalent oxide thickness
RIS
0.001
(Research Intensity Score)
Papers
239
Top papers
A native oxide high-κ gate dielectric for two-dimensional electronics
2020 · 303 citations
Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors
2026 · 5 citations
Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors
2023 · 30 citations
Terbium oxide as high dielectric constant passivation layer for silicon-based metal-oxide-semiconductor capacitor
2025 · 7 citations
A sacrificial HfN interlayer enables oxygen-buffered Mo electrodes for sub‑0.4nm equivalent oxide thickness of HfO2/ZrO2 nanolaminates for DRAM capacitors
2026
Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition
2025 · 8 citations
Threshold voltage variations by oxide fixed charges on 22-nm logic fully depleted silicon-on-insulator junction-MOSFETs
2026
Deposition-time-dependent structural and electrical characteristics of terbium oxide (Tb4O7) films for high-k MOS applications
2025 · 2 citations
Extreme EOT Scaling in Tungsten-Doped In 2 O 3 MOSFETs for Enhanced Stability and Drive Current
2025 · 2 citations
Newest papers
Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors
2026 · 5 citations
A sacrificial HfN interlayer enables oxygen-buffered Mo electrodes for sub‑0.4nm equivalent oxide thickness of HfO2/ZrO2 nanolaminates for DRAM capacitors
2026
Threshold voltage variations by oxide fixed charges on 22-nm logic fully depleted silicon-on-insulator junction-MOSFETs
2026
Al-Doped Rutile TiO 2 with Y 2 O 3 –ZrO 2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors
2026 · 1 citations
Tuning the performance of dysprosium oxide thin film as a gate dielectric layer via annealing in concurrent flow of nitrogen and oxygen ambience
2026
PEALD-grown HfTiO high-k dielectrics enabling high-performance IGZO thin film transistors
2026
Interface dipole engineering via TiO2-doped HfO2 interlayers for flat-band voltage modulation in scaled high-k gate stacks
2026
Improved electrical characteristics of p-substrate Ge MOS and Ge nMOSFET with appropriate rapid oxidation on hafnium nitride interfacial layer
2026
Terbium oxide as high dielectric constant passivation layer for silicon-based metal-oxide-semiconductor capacitor
2025 · 7 citations
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