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Metal gate
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Metal gate
RIS
0.001
(Research Intensity Score)
Papers
241
Top papers
Interface States in Gate Stack of Carbon Nanotube Array Transistors
2024 · 38 citations
MoS 2 Transistors with 4 nm hBN Gate Dielectric and 0.46 V Threshold Voltage
2025 · 14 citations
Achieving 1-nm-Scale Equivalent Oxide Thickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors With CMOS-Friendly Approaches
2025 · 15 citations
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
2017 · 1004 citations
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
2023 · 39 citations
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
2023 · 22 citations
Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch
2023 · 29 citations
High performance ring-type p-GaN AlGaN/GaN HEMTs using reactively sputtered NiNx gate
2025 · 4 citations
Triple Metal Gate Work Function Engineering to Enhance DC and Analog/RF Parameters of Junctionless Double Surrounding Gate Ge Nanotube MOSFET with High-κ Dielectric for the Upcoming Sub 3 nm Technology Node
2026
Newest papers
Triple Metal Gate Work Function Engineering to Enhance DC and Analog/RF Parameters of Junctionless Double Surrounding Gate Ge Nanotube MOSFET with High-κ Dielectric for the Upcoming Sub 3 nm Technology Node
2026
Gate Valves
2026
Gate Valves
2026
Integrating Device Simulation with Machine Learning for Improved Characteristic of Halo Doped Gate Stack Triple Metal Gate all around (HD-GS-TM-GAA) MOSFET
2026
SiC MOSFET gate oxide degradation monitoring: a gate leakage current approach
2026 · 1 citations
Long-Term Operational Stability of Dual-Gated ITO/HfO 2 Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping
2026 · 1 citations
A scalable asymmetric triple-metal gate-all-around nanowire MOSFET architecture with hybrid SiGe/Ge/InGaAs channel
2026 · 1 citations
Structure-Dependent Parameter Trade-Off Optimization on RonCoff and Power Compression of AlGaN/GaN HEMTs for RF Switch Application
2026 · 1 citations
Atomistic mechanisms of opposite threshold voltage shift induced by La and Al doping in HfO2-based gate stacks: First-principles insights
2026
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