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Shallow trench isolation
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Keyword
keyword
Shallow trench isolation
RIS
0.000
(Research Intensity Score)
Papers
55
Top papers
Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
2023 · 48 citations
Research progress on the application of ceria nanoparticles as abrasives in dielectric layer CMP and post cleaning: Structure, morphology, doping, and mechanism
2023 · 49 citations
High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures
2025 · 15 citations
Plasma damage-free in situ etching of β-Ga2O3 using solid-source gallium in the LPCVD system
2025 · 7 citations
Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM
2025 · 8 citations
2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width
2025 · 3 citations
984 V/3.0 mΩ·cm 2 Normally-Off and 817 V/ 2.7 mΩ·cm 2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
2025 · 3 citations
Effect of picolinic acid and sorbitol in ceria-based slurry on shallow trench isolation chemical mechanical polishing
2025 · 6 citations
Optimization of lattice temperature and electrothermal characteristics of stacked nanosheet FET using vanadium oxide as buried oxide and trench material for sub-5 nm technologies
2025 · 6 citations
Newest papers
Poly(acrylic acid)-Containing Ceria Slurries for Shallow Trench Isolation Chemical Mechanical Polishing: Colloidal Stability, Planarization Efficiency, and Selectivity
2026
High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures
2025 · 15 citations
Plasma damage-free in situ etching of β-Ga2O3 using solid-source gallium in the LPCVD system
2025 · 7 citations
Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM
2025 · 8 citations
2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width
2025 · 3 citations
984 V/3.0 mΩ·cm 2 Normally-Off and 817 V/ 2.7 mΩ·cm 2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
2025 · 3 citations
Effect of picolinic acid and sorbitol in ceria-based slurry on shallow trench isolation chemical mechanical polishing
2025 · 6 citations
Optimization of lattice temperature and electrothermal characteristics of stacked nanosheet FET using vanadium oxide as buried oxide and trench material for sub-5 nm technologies
2025 · 6 citations
Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress
2025 · 2 citations
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