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Time-dependent gate oxide breakdown
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Keyword
keyword
Time-dependent gate oxide breakdown
RIS
0.001
(Research Intensity Score)
Papers
68
Top papers
High V TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer
2023 · 42 citations
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
2022 · 62 citations
Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method
2024 · 27 citations
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
2023 · 22 citations
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2021 · 40 citations
Newest papers
Study of Gate Leakage Current and Failure Mechanism for Schottky-Type p-GaN Gate of GaN HEMTs
2026 · 1 citations
SiC MOSFET gate oxide degradation monitoring: a gate leakage current approach
2026 · 1 citations
Homoepitaxial GaN-on-GaN trench MOSFETs with 438 MW/cm2 figure of merit and improved gate reliability
2026
A Ti/ITO Bilayer Gate Electrode Strategy for Improving Subthreshold Swing of Oxide Transistors
2026 · 1 citations
Effect of Heavy Ion Radiation on TDDB Properties and Lifetime Prediction of High-k Dielectric Layers
2026
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