Wide-Bandgap Semiconductors for Power Electronics and Ultraviolet Optoelectronics
This community develops gallium nitride, gallium oxide, and silicon carbide materials for high-voltage power conversion, radio-frequency amplification, and ultraviolet light detection.
The work centers on growing thin films of gallium nitride and gallium oxide, often using chemical vapor deposition or atomic layer deposition. Researchers design high-electron-mobility transistors, power amplifiers, and diodes to handle high voltages and temperatures. A significant portion of the literature addresses the physics of electron mobility, threshold voltage, and breakdown characteristics in these wide-bandgap materials. Applications span power electronics for renewable energy systems, high-frequency communication components, and solar-blind photodetectors for sensing and security. The recurring focus on AlGaN/GaN heterostructures and Ga2O3 devices highlights a dual interest in both electronic switching and optical detection capabilities.
The largest share of the community's output is found in gallium research, accounting for 45.6% of all gallium research, with 15,677 papers here. Nitrogen research also features prominently, representing 19.6% of all nitrogen research, with 12,894 papers. Indium research contributes 9.9% of its total output, with 3,613 papers.
The community comprises 21,988 papers, published primarily in Applied Physics Letters, Journal of Applied Physics, and IEEE Transactions on Electron Devices.
Recent work continues to focus on thermal management for silicon carbide and gallium nitride power devices, as well as the development of solar-blind photodetectors for motion tracking and neuromorphic applications.
Papers behind this description
- Elements of Power Electronics — 2025 — doi:10.1002/9781394240586.ch6
- Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives — IEEE Transactions on Electron Devices, 2024 — doi:10.1109/ted.2023.3346369
- Stability, Reliability, and Robustness of GaN Power Devices: A Review — IEEE Transactions on Power Electronics, 2023 — doi:10.1109/tpel.2023.3266365
- Gallium Nitride and Related Materials — The Materials Research Society series, 2025 — doi:10.1007/978-3-031-83056-3
- Ultra-wide bandgap semiconductor Ga2O3 power diodes — Nature Communications, 2022 — doi:10.1038/s41467-022-31664-y
- GaN-based power devices: Physics, reliability, and perspectives — Journal of Applied Physics, 2021 — doi:10.1063/5.0061354
- Power Electronics Technology for Large-Scale Renewable Energy Generation — Proceedings of the IEEE, 2023 — doi:10.1109/jproc.2023.3253165
- β-Gallium oxide power electronics — APL Materials, 2022 — doi:10.1063/5.0060327
- Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality — Nature Reviews Electrical Engineering, 2025 — doi:10.1038/s44287-024-00135-5
- GaN Power Integration Technology and Its Future Prospects — IEEE Transactions on Electron Devices, 2023 — doi:10.1109/ted.2023.3341053
- An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics — Nature Communications, 2023 — doi:10.1038/s41467-023-40194-0
- Review of self-powered solar-blind photodetectors based on Ga2O3 — Materials Today Physics, 2022 — doi:10.1016/j.mtphys.2022.100883
- Integrated Coupler Design for UAV Free-Positioning Wireless Power Transfer With Inherent Cross- Coupling Utilization and Enlarged Charging Coverage — IEEE Transactions on Power Electronics, 2025 — doi:10.1109/tpel.2025.3582935
- A Methodology for Designing High-Efficiency Power Amplifiers Using Simple Microstrip Harmonic Tuning Circuits — Electronics, 2025 — doi:10.3390/electronics14234767
- Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices — Electronics, 2025 — doi:10.3390/electronics14214193
- Artificial Solar-Blind Optosynapses Using Amorphous Gallium Oxide Phototransistors for Optical In-Sensor Neuromorphic Applications — ACS Nano, 2025 — doi:10.1021/acsnano.5c06760