Solid-State Spin Qubits and Single-Photon Emitters in Wide-Bandgap and Semiconducting Materials
This community investigates the quantum properties of defects and confined electrons in crystalline materials, focusing on the development of spin qubits for quantum computing and single-photon emitters for quantum communication.
The research centers on engineering point defects and quantum dots in wide-bandgap materials such as silicon carbide, hexagonal boron nitride, and diamond, as well as semiconductor heterostructures like gallium arsenide and silicon. Key recurring themes include the control of electron spin states, the generation of indistinguishable single photons, and the implementation of quantum sensing protocols at room temperature. Specific material systems frequently examined include nitrogen-vacancy centers in diamond, silicon vacancy centers, and quantum wells in silicon and germanium. The work emphasizes the integration of these quantum emitters and qubits into scalable device architectures, including crossbar arrays and nanophotonic networks, to enable robust quantum information processing and high-sensitivity magnetic field detection.
The largest share of the community's output is found in arsenic research, accounting for 1.9% of all arsenic research, and 3,040 papers here. This is followed by gallium, which contributes 1.8% of its research field with 3,177 papers, and silicon, which accounts for 1.5% of its research with 5,637 papers.
The community comprises 20,398 papers, with the highest publication volume appearing in Applied Physics Letters, Physical Review B, and Journal of Applied Physics.
Recent work focuses on industry-compatible silicon spin-qubit unit cells, autonomous tuning of spin qubits, and the creation of highly indistinguishable single photons in the telecom C-band. Additional recent studies examine quantum spin resonance in engineered proteins and the use of two-dimensional quantum sensors for probing stress and magnetism at high pressures.