Two-Dimensional Semiconductors and Van der Waals Heterostructures for Electronics and Optoelectronics
This community investigates the synthesis, electronic properties, and device integration of atomically thin materials, specifically transition metal dichalcogenides, black phosphorus, and graphene, for use in transistors, photodetectors, and neuromorphic computing.
The research focuses heavily on molybdenum disulfide, tungsten disulfide, and black phosphorus nanosheets, often combined in van der Waals heterostructures. Key methods include chemical vapor deposition for thin-film growth and the engineering of monolayer and bilayer structures. Applications span field-effect transistors, quantum dots, and hydrogen evolution catalysts, with a significant portion of work dedicated to optimizing electronic and optical properties for next-generation semiconductor devices and sensors.
The largest share of the community's output is found in molybdenum research, representing 14.9% of all molybdenum literature, with 5,108 papers in this group. Phosphorus research also features prominently, accounting for 9.4% of its field with 3,498 papers.
The community comprises 24,168 papers, publishing most frequently in ACS Nano, Nano Letters, and Applied Physics Letters.
Recent work continues to focus on the precise evaluation of photodetectors, the development of multidimensional sensing arrays, and the epitaxial growth of single-crystal transition metal dichalcogenides on sapphire substrates.
Papers behind this description
- Electronic properties of graphene encapsulated with different two-dimensional atomic crystals. — 2025
- Fractional quantum anomalous Hall effect in multilayer graphene — Nature, 2024 — doi:10.1038/s41586-023-07010-7
- Approaching the quantum limit in two-dimensional semiconductor contacts — Nature, 2023 — doi:10.1038/s41586-022-05431-4
- Ultrasensitive optoelectronic biosensor arrays based on twisted bilayer graphene superlattice — National Science Review, 2025 — doi:10.1093/nsr/nwaf357
- Ultralow contact resistance between semimetal and monolayer semiconductors — Nature, 2021 — doi:10.1038/s41586-021-03472-9
- High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel — Nature Communications, 2025 — doi:10.1038/s41467-025-55887-x
- Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications — ACS Nano, 2023 — doi:10.1021/acsnano.2c12759
- Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides — Nature Electronics, 2024 — doi:10.1038/s41928-024-01210-3
- 2D Transition Metal Dichalcogenides for Photocatalysis — Angewandte Chemie International Edition, 2023 — doi:10.1002/anie.202218016
- Advances in 2D Transition Metal Dichalcogenide-Based Gas Sensors — ACS Sensors, 2025 — doi:10.1021/acssensors.5c02126
- Interface Engineering in Van der Waals Heterostructures: Enhancing Photodetector Efficiency through Structural and Functional Modifications — Advanced Functional Materials, 2025 — doi:10.1002/adfm.202516893
- Robust epitaxy of single-crystal transition-metal dichalcogenides on lanthanum-passivated sapphire — Science, 2025 — doi:10.1126/science.aea0849
- Thin Films for Next Generation Technologies: A Comprehensive Review of Fundamentals, Growth, Deposition Strategies, Applications, and Emerging Frontiers — Processes, 2025 — doi:10.3390/pr13123846
- Electrostatic-repulsion-based transfer of van der Waals materials — Nature, 2025 — doi:10.1038/s41586-025-09510-0