Two-Dimensional Transition Metal Dichalcogenides for Electronics and Optoelectronics
This community investigates the synthesis, electronic properties, and device integration of atomically thin semiconductors, primarily molybdenum disulfide and tungsten disulfide, for use in transistors, photodetectors, and quantum materials.
The research focuses on growing high-quality monolayers and heterostructures via chemical vapor deposition and atomic layer deposition. Key materials include MoS2, WS2, and WSe2, often stacked with graphene or boron nitride to create van der Waals heterostructures. Applications span field-effect transistors, broadband photodetectors, and quantum phenomena such as the fractional quantum anomalous Hall effect. The work also addresses critical engineering challenges, including contact resistance, charge transfer, and the fabrication of wafer-scale films for integrated circuits.
The largest share of the community's output is found in molybdenum research, accounting for 12.7% of all molybdenum research, and 16,916 papers here. Carbon and tungsten also contribute significantly, with 6,628 and 5,198 papers respectively.
This group comprises 42,017 papers, published most frequently in Physical Review B, Nano Letters, and ACS Nano.
Recent work continues to refine the growth of single-crystal transition metal dichalcogenides on sapphire substrates and explores interface engineering in van der Waals heterostructures to enhance photodetector efficiency and polarization sensitivity.