Two-Dimensional Materials for Electronics, Photonics and Quantum Devices
This community develops atomically thin crystals—primarily graphene, transition metal dichalcogenides, and boron nitride—to build next-generation transistors, lasers, and photodetectors.
The work centers on synthesizing monolayer and bilayer sheets of molybdenum disulfide, tungsten disulfide, and hexagonal boron nitride via chemical vapor deposition. Researchers engineer these materials into van der Waals heterostructures to create saturable absorbers for mode-locked fiber lasers, field-effect transistors, and broadband photodetectors. Key technical challenges include managing contact resistance, optimizing nonlinear optical properties, and integrating these 2D layers into stable thin-film devices. The research spans fundamental electronic structure analysis to applied device fabrication, with a strong focus on materials that exhibit unique quantum effects at the atomic scale.
The largest share of the community's output is found in molybdenum research, accounting for 18.2% of all molybdenum research, and 13,353 papers here. Boron and nitrogen also contribute significantly, representing 8.0% and 4.3% of their respective element research.
The community comprises 65,214 papers, publishing most frequently in Nano Letters, ACS Nano, and Physical Review B.
Recent work focuses on improving photodetector efficiency through interface engineering in van der Waals heterostructures, developing gas sensors based on transition metal dichalcogenides, and exploring quantum geometric properties in 2D materials.