Oxide Thin-Film Transistors and Transparent Conductive Films
This community focuses on the fabrication and characterization of metal oxide thin films, specifically for use in thin-film transistors and transparent conducting electrodes.
The work centers on materials such as indium tin oxide (ITO), indium gallium zinc oxide (IGZO), and tin oxide (SnO2). Key methods include atomic layer deposition, magnetron sputtering, and spray pyrolysis to create amorphous or crystalline films. Applications range from display backplanes and flexible electronics to solar cells and photoelectrochemical devices. Researchers examine structural, optical, and electrical properties, with significant attention to defect engineering, stability, and the mobility-stability trade-off in oxide semiconductors.
The largest share of the community's output is found in indium research, accounting for 7.7% of all indium research, and 11,455 papers here. Tin research follows with a 6.5% share and 10,704 papers.
There are 24,999 papers in this community, primarily published in Thin Solid Films, Applied Physics Letters, and the Japanese Journal of Applied Physics.
Recent work continues to explore amorphous IGZO transistor structures, three-dimensional integration of dynamic random-access memory, and defect engineering in tin oxide films for photoelectrochemical applications.