Infrared and Terahertz Photodetectors from Tellurium, III-V Semiconductors, and 2D Materials
This community develops photodetectors and focal plane arrays for infrared and terahertz imaging, sensing, and optical communication, utilizing materials such as tellurium nanowires, InAs/InSb superlattices, and graphene.
The work centers on the fabrication and characterization of thin films, heterojunctions, and nanowires to achieve high sensitivity and low dark current. Recurring materials include tellurium, indium gallium arsenide (InGaAs), and antimony-based superlattices, often processed via molecular beam epitaxy. Applications span short-wave and long-wave infrared detection, self-powered sensing, and broadband photodetection. Specific device architectures frequently cited include avalanche photodiodes, quantum well structures, and type-II superlattices, with a notable focus on room-temperature operation and enhanced photoresponse through heterojunction engineering.
The largest share of the community's output is found in tellurium research, accounting for 2.9% of all tellurium research, and 1,817 papers here. Indium and gallium also contribute significantly, with 1,290 and 1,006 papers respectively.
There are 7,355 papers in this community, publishing most frequently in Proceedings of SPIE, Applied Physics Letters, and Journal of Applied Physics.
Recent work includes flexible self-powered photodetectors using tellurium-based hybrids, ultrafast growth of millimeter-scale tellurium nanowires, and flexible InGaAs/InAlAs avalanche photodiodes for short-wave infrared detection.