Topological Insulators, Semimetals, and Two-Dimensional Quantum Materials
This community investigates the electronic structure, surface states, and transport properties of topological insulators, Weyl and Dirac semimetals, and two-dimensional materials like silicene and germanene, primarily to understand and control quantum phenomena such as the anomalous Hall effect and spintronics.
The research focuses heavily on the electronic and optical properties of topological insulators and semimetals, with a strong emphasis on surface and edge states. Recurring themes include the anomalous Hall effect, spin Hall effect, and quantum spin phenomena. The work frequently involves thin films, quantum wells, and Josephson junctions, often utilizing density functional theory to model structural and electronic properties. Materials of interest include bismuth, tellurium, and transition metal compounds, as well as two-dimensional allotropes like silicene and germanene. The goal is to characterize these materials for potential use in quantum devices, spintronics, and optoelectronics, with a particular focus on magnetic topological phases and superconducting diode effects.
The community is most prominent in research involving bismuth, tellurium, and germanium, representing 1.9%, 2.0%, and 1.4% of all research tracked for those elements, respectively. Carbon and silicon also contribute significantly, with 2,025 and 1,783 papers, respectively, though these represent smaller shares of their respective total research outputs.
The community comprises 14,220 papers, published predominantly in Physical Review B, Physical Review Letters, and Applied Physics Letters.
Recent work continues to explore the quantum anomalous Hall effect in ferromagnetic metals, spin polarization in altermagnet-based superconductor heterostructures, and the structural and electronic properties of topological semimetals like ZrSn3. Studies also examine topological lasing in photonic crystals and the adsorption properties of doped germanene monolayers for gas sensing.