III-V Nanowires and Quantum Dots for Single-Photon Sources and Photodetectors
This community develops semiconductor nanostructures, primarily gallium arsenide and indium gallium arsenide, to generate and detect individual photons for quantum communication and to absorb light for solar cells and infrared sensors.
The work centers on the epitaxial growth of nanowires and quantum dots, with a heavy focus on gallium arsenide (GaAs) and indium gallium arsenide (InGaAs) materials. Recurring methods include molecular beam epitaxy and droplet epitaxy, while key applications involve single-photon sources, quantum key distribution, and intermediate band solar cells. The research also covers the integration of these structures with silicon and the engineering of core-shell heterostructures to optimize optical emission and absorption properties.
The largest share of the community's output is found in gallium research, accounting for 4.8% of all gallium research, and arsenic research, accounting for 5.2% of all arsenic research. Gallium also contributes the highest paper count within this group, with 8,012 papers.
The community comprises 17,224 papers, published most frequently in Applied Physics Letters, Journal of Applied Physics, and Journal of Crystal Growth.
Recent work continues to focus on improving the efficiency of III-V nanowire solar cells and developing deterministic single-photon sources in the telecom C-band, alongside research into storing quantum coherence in quantum dot nuclear spin ensembles.