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Impact ionization
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Impact ionization
RIS
0.001
(Research Intensity Score)
Papers
100
Top papers
Ultrafast avalanche photodiode exceeding 100 GHz bandwidth
2025 · 8 citations
The mechanism of single-event burnout in NiO/ β -Ga2O3 heterojunction diodes under atmospheric neutron irradiation
2026 · 5 citations
Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation
2026 · 5 citations
Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs
2026 · 4 citations
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs
2025 · 5 citations
Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability
2026 · 1 citations
Recent advances for developing GaN-based power devices grown on Si substrate
2026
Radiation-Induced Charge Collection Comparison Between Silicon and Silicon Carbide Avalanche Photodiodes
2026
Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage
2024 · 17 citations
Newest papers
The mechanism of single-event burnout in NiO/ β -Ga2O3 heterojunction diodes under atmospheric neutron irradiation
2026 · 5 citations
Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation
2026 · 5 citations
Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs
2026 · 4 citations
Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability
2026 · 1 citations
Recent advances for developing GaN-based power devices grown on Si substrate
2026
Radiation-Induced Charge Collection Comparison Between Silicon and Silicon Carbide Avalanche Photodiodes
2026
TCAD modeling of proton irradiated thick (300 µm) Low Gain Avalanche Detector
2026
Study of Gate Leakage Current and Failure Mechanism for Schottky-Type p-GaN Gate of GaN HEMTs
2026 · 1 citations
Optimizing high-temperature electron mobility in single-crystal Bi$_2$O$_2$Se based on its unconventional dependence on concentration
2026
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