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Random access memory
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Keyword
keyword
Random access memory
RIS
0.001
(Research Intensity Score)
Papers
114
Top papers
Recent progress in spin-orbit torque magnetic random-access memory
2024 · 98 citations
Hafnium Oxide (HfO 2 ) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
2022 · 270 citations
Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors
2025 · 20 citations
Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities
2024 · 43 citations
First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel
2024 · 27 citations
Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques
2024 · 20 citations
Nonvolatile Multistates Memories for High-Density Data Storage
2020 · 166 citations
High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM
2025 · 10 citations
First Demonstration of Deeply Scaled 2T0C DRAM With Record Data Retention and Fast Write Speed
2025 · 12 citations
Newest papers
Ta-Sb-Te Phase Change Memory Device With Reduced Multilevel Resistance Drift for Deep Neural Network Applications
2026 · 1 citations
Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics
2026
Phase-Change Memory Based Passive Timing Circuits for DRAM Refresh Management
2026
Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation
2026
Locking Tetrahedral Ge Coordination Enables Stable Multilevel Phase-Change Memory
2026
Modelling of FEOL and BEOL Amorphous Gallium Oxide-based Ferroelectric FETs with a Metal Interlayer for Multilevel Operation in Short Channel Devices
2026
Localized Nanoscale Switching and Constrained Crystallization Behavior in 3D Vertical Phase Change Memory
2026
Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors
2025 · 20 citations
High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM
2025 · 10 citations
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