Ferroelectric Oxide Thin Films for Memory, Transistors and Neuromorphic Computing
This community develops thin-film oxide materials and deposition techniques to build non-volatile memory, low-power transistors, and brain-inspired computing hardware.
The work centers on hafnium oxide and hafnium-zirconium oxide thin films, fabricated primarily via atomic layer deposition and magnetron sputtering. These materials are engineered to exhibit ferroelectric properties, phase-change behavior, or resistive switching, enabling their use in memory cells, field-effect transistors, and memristors. The research also covers aluminum nitride and lithium niobate for acoustic wave devices, and explores the integration of these oxide layers into neuromorphic architectures for in-memory computing. The focus is on material stability, switching speed, and device integration for advanced electronics.
The largest share of the community's output is found in hafnium research, accounting for 37.7% of all hafnium research, and 3,990 papers here. Tantalum follows with a 16.4% share of its research, and scandium with a 6.1% share.
The community comprises 21,663 papers, published most frequently in Applied Physics Letters, Journal of Applied Physics, and Thin Solid Films.
Recent work includes ferroelectric transistors for NAND flash memory, amorphous phase-change memory alloys with reduced resistance drift, and memristor-based platforms for spiking neural networks and adaptive analog-to-digital conversion.
Papers behind this description
- A compute-in-memory chip based on resistive random-access memory — Nature, 2022 — doi:10.1038/s41586-022-04992-8
- The fundamentals and applications of ferroelectric HfO2 — Nature Reviews Materials, 2022 — doi:10.1038/s41578-022-00431-2
- A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference — Nature Electronics, 2023 — doi:10.1038/s41928-023-01010-1
- Low-Power Memristor for Neuromorphic Computing: From Materials to Applications — Nano-Micro Letters, 2025 — doi:10.1007/s40820-025-01705-4
- A stable rhombohedral phase in ferroelectric Hf(Zr) 1+ x O 2 capacitor with ultralow coercive field — Science, 2023 — doi:10.1126/science.adf6137
- Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide — Nano Convergence, 2023 — doi:10.1186/s40580-023-00403-4
- High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics — Nature Communications, 2024 — doi:10.1038/s41467-024-46878-5
- Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors — Nature, 2022 — doi:10.1038/s41586-022-04425-6
- Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge — Nature Communications, 2024 — doi:10.1038/s41467-024-46682-1
- Ferroelectric transistors for low-power NAND flash memory — Nature, 2025 — doi:10.1038/s41586-025-09793-3
- Amorphous phase-change memory alloy with no resistance drift — Nature Materials, 2025 — doi:10.1038/s41563-025-02361-0
- A ferroelectric–memristor memory for both training and inference — Nature Electronics, 2025 — doi:10.1038/s41928-025-01454-7
- Recent progress in aluminum nitride for piezoelectric MEMS mirror applications: enhancements with scandium doping — Microsystems & Nanoengineering, 2025 — doi:10.1038/s41378-025-01053-8
- Ferroelectric-based neuromorphic memory devices for bio-inspired computing — Nature Reviews Electrical Engineering, 2025 — doi:10.1038/s44287-025-00222-1
- Novel Atomic Layer Processes for Semiconductor Manufacturing: Area Selective Deposition, Atomic Layer Annealing, and Atomic Layer Etching — International Journal of Precision Engineering and Manufacturing, 2025 — doi:10.1007/s12541-025-01337-z