Oxide-Based Memory, Neuromorphic Computing, and Low-Power Transistors
This community develops thin-film oxide materials and devices for high-density memory, brain-inspired computing, and energy-efficient transistors.
The work centers on hafnium oxide and zirconium oxide thin films, deposited via atomic layer deposition, to create resistive switching and phase-change memory devices. A significant portion of the research applies these materials to neuromorphic computing, including memristors, synaptic devices, and in-memory computing architectures. Additionally, the community investigates ferroelectric and negative capacitance effects in hafnium oxide to enable tunnel field-effect transistors and low-power logic devices. These efforts aim to overcome the energy and speed limitations of conventional silicon-based architectures by integrating memory and computation into oxide-based hardware.
Hafnium research accounts for 36.8% of this community's output, representing 9,635 papers. Tantalum follows with a 9.6% share, and Germanium with 5.4%.
The community comprises 53,588 papers, primarily published in Applied Physics Letters, Journal of Applied Physics, and Japanese Journal of Applied Physics.
Recent work continues to focus on memristor-based in-memory computing, spiking neural networks, and ferroelectric transistors for low-power memory applications.